Niobium-based integrated circuit technologies
Creators
- 1. Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.
Description
In this paper the metallurgical and electrical properties of Nb and NbN films for use as Josephson junction electrodes and wiring layers are investigated. The crystallographic and supreconducting properties necessary for Nb-based integrated circuit processes are clarified. Tunnel barrier structures of NbN-Nb oxide-NbN (Pb alloy) and Nb-Al oxide-Nb Josephson junctions are analyzed and correlated with junction characteristics and critical current uniformity. New types of Josephson junctions with artificial tunnel barriers, such as amorphous Si or Mg oxide, are reviewed. A variety of Josephson junction structures or processes have been developed for the Nb-based Josephson integrated circuits in order to improve circuit performance. They are discussed here
Additional details
Publishing Information
- Journal Title
- Proceedings of the IEEE
- Journal Volume
- 77
- Journal Issue
- 8
- Series
- Proc. IEEE.
- Journal Page Range
- 1164-1176
- ISSN
- 0018-9219
- CODEN
- IEEPA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21012703
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; CRITICAL CURRENT; CRYSTALLOGRAPHY; ELECTRICAL PROPERTIES; FABRICATION; INTEGRATED CIRCUITS; JOSEPHSON JUNCTIONS; LOGIC CIRCUITS; MATERIALS TESTING; MEMORY DEVICES; NIOBIUM BASE ALLOYS; NIOBIUM NITRIDES; NIOBIUM OXIDES; PARALLEL PROCESSING; PERFORMANCE; SUPERCONDUCTIVITY
- Descriptors DEC
- ALLOYS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRONIC CIRCUITS; NIOBIUM ALLOYS; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; PROGRAMMING; SEMICONDUCTOR JUNCTIONS; TESTING; TRANSITION ELEMENT COMPOUNDS