Published October 2009
| Version v1
Journal article
Growth of CdS crystals by the physical vapor transport method
- 1. China Electronics Technology Group Corporation, No. 46 Research Institute, Tianjin 300220 (China)
Description
Based on the physical vapor transport (PVT) method, the growth of large-size CdS crystals inside a vertical semi-closed tube is studied. Firstly, in order to ensure 1D diffusion-advection transport, multi-thin tubes are used in the growth tube. The XRD spectra of the CdS crystal grown in this configuration indicates that the crystal quality has clearly been improved, where the FWHM is 58.5 arcsec. Secondly, theoretical and experimental growth rates under different total pressures are compared; the results show that the experiential growth rate equation is valid for our semi-tube growth, and it could be used to estimate the growth rate and maximum growth time under different total pressures.
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/30/10/103002Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 30
- Journal Issue
- 10
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42071459
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM SULFIDES; CRYSTAL GROWTH; CRYSTALS; PHYSICAL VAPOR DEPOSITION; X-RAY DIFFRACTION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; INORGANIC PHOSPHORS; PHOSPHORS; SCATTERING; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING