Published October 2009 | Version v1
Journal article

Growth of CdS crystals by the physical vapor transport method

  • 1. China Electronics Technology Group Corporation, No. 46 Research Institute, Tianjin 300220 (China)

Description

Based on the physical vapor transport (PVT) method, the growth of large-size CdS crystals inside a vertical semi-closed tube is studied. Firstly, in order to ensure 1D diffusion-advection transport, multi-thin tubes are used in the growth tube. The XRD spectra of the CdS crystal grown in this configuration indicates that the crystal quality has clearly been improved, where the FWHM is 58.5 arcsec. Secondly, theoretical and experimental growth rates under different total pressures are compared; the results show that the experiential growth rate equation is valid for our semi-tube growth, and it could be used to estimate the growth rate and maximum growth time under different total pressures.

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/30/10/103002

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
30
Journal Issue
10
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42071459
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CADMIUM SULFIDES; CRYSTAL GROWTH; CRYSTALS; PHYSICAL VAPOR DEPOSITION; X-RAY DIFFRACTION
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; INORGANIC PHOSPHORS; PHOSPHORS; SCATTERING; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING