Published January 2008 | Version v1
Journal article

Hot carrier photoluminescence in InN epilayers

  • 1. Chung Yuan Christian University, Department of Physics, Center for Nanotechnology at CYCU and R and D Center for Membrane Technology, Chung-Li, Taiwan (China)
  • 2. National Central University, Department of Physics, Chung-Li, Taiwan (China)
  • 3. National Taiwan Ocean University, Institute of Optoelectronic Sciences, Keelung, Taiwan (China)
  • 4. Tung Nan Institute of Technology, Department of Electronic Engineering, Taipei, Taiwan (China)
  • 5. Yuan Ze University, Department of Electrical Engineering, Chung-Li, Taiwan (China)

Description

The energy relaxation of electrons in InN epilayers is investigated by excitation- and electric field-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature of the hot carriers. It was found that the electron temperature variation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The LO-phonon lifetime is fitted to be 0.89 ps, which is higher than the theoretical phonon lifetime. This deviation is attributed to the presence of the non-equilibrium hot-phonon effects. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-007-4281-5

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
90
Journal Issue
1
Series
Special Issue: ''Synchrotron radiation in art and archaeology''
Journal Page Range
p. 123-127
ISSN
0947-8396
CODEN
APAMFC