Published 1993
| Version v1
Miscellaneous
Electron induced conductivity in argon ion implanted GaAs
Creators
Description
Short communication
Additional details
Additional titles
- Original title (Russian)
- Электронно-индуцированная проводимост' в GaAs имплантированного ионами аргона
Publishing Information
- Imprint Title
- Thesies of the proceedings of the 23. International meeting on the physics of charged particle interaction with crystals
- Imprint Pagination
- 148 p.
- Journal Page Range
- p. 100.
- Report number
- INIS-RU--377
Conference
- Title
- 23. International meeting on the physics of charged particle interaction with crystals.
- Original Conference Title
- 23. Mezhnatsional'noe soveshchanie po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 31 May - 2 Jun 1993.
- Place
- Moscow (Russian Federation).
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26014859
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ARGON IONS; DOSE-RESPONSE RELATIONSHIPS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FLUX DENSITY; GALLIUM ARSENIDES; ION IMPLANTATION; KEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; RADIATION FLUX
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ENERGY RANGE; GALLIUM COMPOUNDS; IONS; KEV RANGE; LEPTON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS