Published February 13, 2013 | Version v1
Journal article Metadata-only

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures

Creators

  • 1. Institute for Nanoscience and Engineering, University of Arkansas, 731 W. Dickson str., Fayetteville, AR 72701 (United States)
  • 2. Leibniz-Institute for Crystal Growth, Max-Born-Str. 2, D-12489 Berlin (Germany)
  • 3. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kyiv 03028 (Ukraine)
  • 4. Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 (United States)
  • 5. Department of Electrical Engineering, University of Arkansas, 3217 Bell Engineering, Fayetteville, AR 72701 (United States)
  • 6. Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia V8W 3P6 (Canada)

Description

The structural and optical properties of a set of high-quality GaAs1-xBix/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/46/6/065306

Additional details

Identifiers

DOI
10.1088/0022-3727/46/6/065306;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
46
Journal Issue
6
Journal Page Range
[8 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44039752
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
BISMUTH COMPOUNDS; CONFINEMENT; CRYSTAL STRUCTURE; GALLIUM ARSENIDES; GROUND STATES; LAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; TRAPS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; ENERGY LEVELS; GALLIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES