Formation of ZnO memristor structures by scratching probe nanolithography

This work presents the results of the formation and investigation of Al₂O₃/ZnO:In/ZnO/Ti memristor structures. It is shown that using Ti layer can improve memristive effect. Resistive switching from high resistance state (HRS) to low resistance state (LRS) occurred at 2.1 ± 0.3 V, and from LRS to HRS at -1.5 ± 0.3 V. Endurance test showed that HRS was 5.51 ± 0.13 GΩ and LRS was 0.25 ± 0.05 GΩ. HRS/LRS coefficient equalled to 22. The results can be useful for micro- and nanoelectronics elements manufacturing, as well as micro- and nanosystem engineering using probe nanotechnologies and for ZnO- based RRAM fabrication. (paper)