Ionic implantation of donor impurity into indium phosphide

Effect of modes of implantation and annealing a donor impurity on the quality of ion-doped layers of indium phosphide is investigated. As implanted impurities are used selenium, germanium and silicon. The experiments on the InP irradiation with silicon ions with preliminary pulse annealing of radiation defects show a possibility obtaining donor layers with high and stable electric parameters. Preliminary irradiation with phosphorus ions while doping semi-insulating InP with silicon and following pulse annealing permit to lower the contact resistance for the Hahn diodes in the Au/AuGe/Ni/InP with 10-2 to 10-6 Ohm x cm2