Low temperature carrier transport study of monolayer MoS₂ field effect transistors prepared by chemical vapor deposition under an atmospheric pressure

Large size monolayer Molybdenum disulphide (MoS₂) was successfully grown by chemical vapor deposition method under an atmospheric pressure. The electrical transport properties of the fabricated back-gate monolayer MoS₂ field effect transistors (FETs) were investigated under low temperatures; a peak field effect mobility of 59 cm²V⁻¹s⁻¹ was achieved. With the assist of Raman measurement under low temperature, this work identified the mobility limiting factor for the monolayer MoS₂ FETs: homopolar phonon scattering under low temperature and electron-polar optical phonon scattering at room temperature