Published 2000 | Version v1
Miscellaneous Open

Semiconductor radiation physics at WWR-M reactor

Description

Results of long term studies in semiconductor radiation physics are presented. Information about the nature of radiation defects, change of their properties depending on composition of crystal impurities, neutron fluence values and crystal thermal processing is discussed. Technology of silicon production with wide range of specific resistance using neutron transmutation doping is developed

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Part of:
40 years of neutron research at the WWR-M reactor

Additional details

Additional titles

Original title (Ukrainian)
Radyiatsyijna fyizika napyivprovyidnikyiv na reaktoryi WWR-M

Publishing Information

Publisher
Yinstitut Yadernikh Doslyidzhen', NAN Ukrayini
Imprint Place
Kyiv (Ukraine)
Imprint Title
40 years of neutron research at the WWR-M reactor
Imprint Pagination
57 p.
Journal Page Range
p. 40-43
Report number
INIS-UA--072

Conference

Title
40 years of neutron research at the WWR-M reactor
Original Conference Title
40 rokyiv nejtronnikh doslyidzhen' na reaktoryi WWR-M
Dates
10 Feb 2000
Place
Kyiv (Ukraine)

Optional Information

Notes
Imprint:40 rokyiv nejtronnikh doslyidzhen' na reaktoryi WWR-M