Displacement of group III, IV, V, and VI impurities in Si by the analyzing beam

By means of 2MeV He+ backscattering and 1.5 MeV H+ backscattering and nuclear reaction analysis in combination with the channeling technique displacement of impurity atoms in Si from substitutional into non-substitutional positions under bombardment is studied. In this paper the authors report on the displacement of Ga, Ge, P, As, Sb, Bi, Se, and Te in Si single crystals. It appears that displacement of impurity atoms is not an exception but almost a rule. The only element for which an effect was not found was Ge. Values for the displacement rate were derived and appeared to be, with the exception for Ge, all of the same order of magnitude. (Auth.)