Published September 1983
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Hopping absorption edge in silicon inversion layers
Description
The low frequency gap observed in the absorption spectrum of silicon inversion layers is related to the AC variable range hopping. The frequency dependence of the absorption coefficient is calculated. (author)
Availability note (English)
MF available from INIS under the Report Number.Files
15069719.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 7 p.
- Report number
- IC--83/175
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 15069719
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTRA; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; FREQUENCY DEPENDENCE; SILICON
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; PHYSICAL PROPERTIES; SEMIMETALS; SPECTRA