Published August 2013
| Version v1
Journal article
Investigation of localization effect in GaN-rich InGaN alloys and modified band-tail model
Creators
- 1. School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin (China)
- 2. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructures, Department of Physics, Nanjing University, Nanjing (China)
Description
The temperature-dependent PL properties of GaN-rich InxGa1-xN alloys is investigated and S-shaped temperature dependence is observed in all InGaN samples. It is found that the origin of localization effect in samples A and B are different from that in sample C. For samples A and B, In content fluctuations should be the origin of localization effect, while the localization effect can be attributed to In-rich clusters and metallic indium inclusions for sample C. In addition, the band-tail model is modified and the modified band-tail model is used to investigate the degree of localization effect in the three samples. (author)
Additional details
Publishing Information
- Journal Title
- Bulletin of Materials Science
- Journal Volume
- 36
- Journal Issue
- 4
- Journal Page Range
- p. 619-622
- CODEN
- BUMSDW
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 44120810
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BAND THEORY; INDIUM ALLOYS; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALLOYS; EMISSION; LUMINESCENCE; PHOTON EMISSION
Optional Information
- Notes
- 33 refs., 3 figs., 1 tab.