Published April 10, 2006
| Version v1
Journal article
Individual β-Ga2O3 nanowires as solar-blind photodetectors
Creators
- 1. Micro-Nano Technologies Research Center, Hunan University, Changsha 410082 (China) and Institute of Physics, Chinese Academy of Science, Beijing 100080 (CN)
Description
Individual β-Ga2O3 nanowires as solar-blind photodetectors are investigated. The detectors show encouraging advantages to 254 nm light. The dark current is on the order of pA. The conductance of the nanowire increases by about three orders of magnitude under 254 nm ultraviolet illumination. The upper limits of the response and recovery time are 0.22 and 0.09 s, respectively. These results indicate that β-Ga2O3 nanowires have potential applications in realizing future miniaturized solar-blind photodetectors
Additional details
Identifiers
- DOI
- 10.1063/1.2193463;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 88
- Journal Issue
- 15
- Journal Page Range
- p. 153107-153107.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37083202
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; GALLIUM OXIDES; PHOTODETECTORS; QUANTUM WIRES; ULTRAVIOLET RADIATION
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS
Optional Information
- Notes
- (c) 2006 American Institute of Physics