Precise measurement of the free electron g-factor in InSb

The dependence of g-factor of free electrons in n-InSb on magnetic field and concentration is investigated by the spin-flip Raman scattering gain method (SFRS method). The correct values of g-factor at the conduction band edge g0 = -51.55 +- 0.02 and dg/dH (H) parallel [100]) = (2.06 +- 0.02) (1/T) are obtained by extrapolation of these values to zero field and concentration. The value of g0 agrees well with the data obtained by electron spin resonance (ESR) method (g0 = -51.53). The g-factor anisotropy coefficient γ = (0.095 +- 0.004) (1/T) is measured at H = 0.9434 T. The values m*/m0 = 0.0135 +- 0.0001, E/sub p/ = (24.55 +- 0.2) eV, E/sub Q/ = (17.8 +- 1) eV, E'/sub p/ = (6.0 +- 3.8) eV, F = -2.0 +- 0.4 and N1 = -0.04 +- 0.03 are obtained by using the parameters: Δ = (0.803 +- 0.005) eV and E/sub g/ = (0.2368 +- 0.0002) eV. (author)