Published August 13, 2001 | Version v1
Journal article

Temporal evolution of GaSb/GaAs quantum dot formation

Description

The formation of GaSb quantum dots in a GaAs matrix in the Stranski--Krastanow growth mode under metalorganic chemical vapor deposition conditions is investigated. Transmission electron microscopical images and photoluminescence measurements show the islands to nucleate during the GaSb deposition and to grow subsequently by mass transfer from the two-dimensional wetting layer. The evolving surface morphology indicates local equilibria between quantum dots and the surrounding wetting layer regions. Copyright 2001 American Institute of Physics

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
79
Journal Issue
7
Journal Page Range
p. 1027-1029
ISSN
0003-6951

Optional Information

Notes
Othernumber: APPLAB000079000007001027000001; 041133APL
Funding organization
United States (United States)