Published August 13, 2001
| Version v1
Journal article
Temporal evolution of GaSb/GaAs quantum dot formation
Description
The formation of GaSb quantum dots in a GaAs matrix in the Stranski--Krastanow growth mode under metalorganic chemical vapor deposition conditions is investigated. Transmission electron microscopical images and photoluminescence measurements show the islands to nucleate during the GaSb deposition and to grow subsequently by mass transfer from the two-dimensional wetting layer. The evolving surface morphology indicates local equilibria between quantum dots and the surrounding wetting layer regions. Copyright 2001 American Institute of Physics
Additional details
Identifiers
- DOI
- 10.1063/1.1394715;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 79
- Journal Issue
- 7
- Journal Page Range
- p. 1027-1029
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 32047620
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; NUCLEATION; VAPOR PHASE EPITAXY
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; EPITAXY; GALLIUM COMPOUNDS; PNICTIDES; SURFACE COATING
Optional Information
- Notes
- Othernumber: APPLAB000079000007001027000001; 041133APL
- Funding organization
- United States (United States)