On the possibility of obtaining highly stoichiometric PbTe and Pb1-x Snx Te films and periodic structures by a laser-pulse epitaxy method

Physical principles of laser technology designed to obtain thin and super-thin PbTe and Pb1-xSnxTe semiconductor layers out of Pb, Te, and Sn elementary sources are discussed. Samples varied from highly stoichiometric layers which possessed intrinsic conductivity in the temperature range T≥78 K, up to highly doped (by inner defects) n-and p-type layers. Structural quality and composition of PbTe and Pb1-x Snx Te layers, as well as the free-carrier concentration, are related with technological parameters. Technological mode has been selected to obtain PbTe-Pba-PbTe-Pba... multi-layer structures including PbTe quantum-well layers and amorphous Pba element. 7 refs