Published October 1992 | Version v1
Journal article Metadata-only

Enhancement of the secondary ion emission from Si by O/sub 2 and H/sub 2/O adsorption

Creators

  • 1. Department of Physics, National University of Singapore (Singapore)

Description

The positive and negative secondary ion emission of Si are examined as a function of O/sub 2 and H/sub 2/O surface coverage under conditions of simultaneous adsorption and Ar/sup+ ion bombardment. It is found that the ion-molecule mechanism accounts for the adsorbate-induced signals and that yield enhancement by H/sub 2/O adsorption is less effective than O/sub 2 adsorption. (authors)

Additional details

Publishing Information

Journal Title
Singapore Journal of Physics
Journal Volume
9
Journal Issue
1
Journal Page Range
p. 113-123
ISSN
0217-4251

INIS

Country of Publication
Singapore
Country of Input or Organization
Singapore
INIS RN
42007953
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ADSORPTION; ION EMISSION; IONS; SILICON
Descriptors DEC
CHARGED PARTICLES; ELEMENTS; EMISSION; SEMIMETALS; SORPTION