Published February 1, 2016 | Version v1
Journal article

Isolate extended state in the DNA molecular transistor with surface interaction

Description

The field effect characteristic of a DNA molecular device is investigated in a tight binding model with binary disorder and side site correlation. Using the transfer-matrix method and Landauer–Büttiker theory, we find that the system has isolated extended state that is irrespective of the DNA sequence and can be modulated by the gate voltage. When the gate voltage reaches some proper value, the isolated extended state appears at the Fermi level of the system and the long range charge transport is greatly enhanced. We attribute this phenomenon to the combination of the external field, the surface interaction, and the intrinsic disorder of DNA. The result is a generic feature of the nanowire with binary disorder and surface interaction.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2015.11.021

Additional details

Identifiers

DOI
10.1016/j.physb.2015.11.021;
PII
S0921-4526(15)30325-2;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
482
Journal Page Range
p. 1-7
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.