Published February 1, 2016
| Version v1
Journal article
Isolate extended state in the DNA molecular transistor with surface interaction
Creators
Description
The field effect characteristic of a DNA molecular device is investigated in a tight binding model with binary disorder and side site correlation. Using the transfer-matrix method and Landauer–Büttiker theory, we find that the system has isolated extended state that is irrespective of the DNA sequence and can be modulated by the gate voltage. When the gate voltage reaches some proper value, the isolated extended state appears at the Fermi level of the system and the long range charge transport is greatly enhanced. We attribute this phenomenon to the combination of the external field, the surface interaction, and the intrinsic disorder of DNA. The result is a generic feature of the nanowire with binary disorder and surface interaction.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2015.11.021Additional details
Identifiers
- DOI
- 10.1016/j.physb.2015.11.021;
- PII
- S0921-4526(15)30325-2;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 482
- Journal Page Range
- p. 1-7
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48011931
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE TRANSPORT; CORRELATIONS; DNA; ELECTRIC POTENTIAL; FERMI LEVEL; FIELD EFFECT TRANSISTORS; INTERACTIONS; NANOWIRES; SURFACES; TRANSFER MATRIX METHOD
- Descriptors DEC
- CALCULATION METHODS; ENERGY LEVELS; NANOSTRUCTURES; NUCLEIC ACIDS; ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.