Published November 13, 2006 | Version v1
Journal article

Plasma Immersion Ion Implantation with a 4kV/10kHz Compact High Voltage Pulser

  • 1. Associated Laboratory of Plasma, National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos, Sao Paulo (Brazil)
  • 2. Institute of Ion Beam Physics and Materials Research, Rossendorf, Dresden (Germany)
  • 3. Department of Aeronautics and Mechanics, Technological Institute of Aeronautics, Sao Jose dos Campos, Sao Paulo (Brazil)

Description

Development of a 4 kV/10 kHz Compact High Voltage Pulser and its application to nitrogen plasma immersion ion implantation (PIII) of different materials as Si, Al alloys, SS304 stainless steel and Ti alloys are discussed. Low voltage (1-5 kV) pulses at high frequencies (up to 20 kHz for 2 kV) were obtained with maximum power delivered at 5 kV, 7 kHz. These conditions were not sufficient to reach temperatures above 200 deg. C in the samples because of short duration of the pulses. However, very shallow implantations of nitrogen in Si, Al5052, SS304 were observed by Auger electron spectroscopy and improved corrosion resistance was obtained for Al5052 when it was treated by nitrogen PIII at 2.5 kV, 5μs and 5 kHz pulses

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
866
Journal Issue
1
Journal Page Range
p. 237-240
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
16. international conference on ion implantation technology
Acronym
IIT 2006
Dates
11-16 Jun 2006
Place
Marseille (France)

Optional Information

Notes
(c) 2006 American Institute of Physics