Published August 2008 | Version v1
Journal article Metadata-only

Effect of CO on Characteristics of AlGaN/GaN Schottky Diode

Creators

  • 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  • 2. Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences (China)

Description

Pt Schottky diode gas sensors for CO are fabricated using AlGaN/GaN high electron mobility transistor (HEMTs) structure. The diodes show a remarkable sensor signal (3 mA, in N2; 2mA in air ambient) biased 2 V after 1% CO is introduced at 50° C. The Schottky barrier heights decrease for 36meV and 27meV in the two cases respectively The devices exhibit a slow recovery characteristic in air ambient but almost none in the background of pure N2, which reveals that oxygen molecules could accelerate the desorption of CO and offer restrictions to CO detection. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/25/8/078

Additional details

Identifiers

DOI
10.1088/0256-307X/25/8/078;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
25
Journal Issue
8
Journal Page Range
p. 3025-3027
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44123545
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
AIR; ALUMINIUM COMPOUNDS; CARBON MONOXIDE; DESORPTION; ELECTRON MOBILITY; GALLIUM NITRIDES; MATERIALS RECOVERY; MOLECULES; OXYGEN; PLATINUM; SCHOTTKY BARRIER DIODES; SENSORS; TRANSISTORS
Descriptors DEC
CARBON COMPOUNDS; CARBON OXIDES; CHALCOGENIDES; ELEMENTS; FLUIDS; GALLIUM COMPOUNDS; GASES; MANAGEMENT; METALS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; PLATINUM METALS; PNICTIDES; PROCESSING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SORPTION; TRANSITION ELEMENTS; WASTE MANAGEMENT; WASTE PROCESSING