Published 1976 | Version v1
Book Metadata-only

A tight-binding model of the ZnS F-centre

Creators

  • 1. Centre National de la Recherche Scientifique, 54 - Nancy (France). Lab. de Physique de Solide

Description

Using a tight-binding parametrization of the bandstructure of ZnS, the energy levels of the F-centre associated with an S vacancy are calculated. The results are compared with the experimental data. (author)

Additional details

Publishing Information

Publisher
Institute of Physics.
Imprint Place
Bristol
ISBN
0 85498 121 7
Imprint Title
Radiation effects in semiconductors, 1976. Invited and contributed papers from the international conference on radiation effects in semiconductors held in Dubrovnik, 6-9 September 1976
Journal Issue
no. 31
Series
Institute of Physics Conference Series.
Journal Page Range
p. 458-464.
ISSN
0305-2346

Conference

Title
International conference on radiation effects in semiconductors.
Dates
6 - 9 Sep 1976.
Place
Dubrovnik, Yugoslavia.

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
9370204
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BAND THEORY; BOUND STATE; ELECTRONIC STRUCTURE; ENERGY LEVELS; F CENTERS; SULFUR; ZINC SULFIDES
Descriptors DEC
CHALCOGENIDES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; INORGANIC PHOSPHORS; NONMETALS; PHOSPHORS; POINT DEFECTS; SULFIDES; SULFUR COMPOUNDS; VACANCIES; ZINC COMPOUNDS