Controlled fabrication of electrically contacted carbon nanoscrolls
Creators
- 1. School of Material Science, Japan Advanced Institute of Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 (Japan)
- 2. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, 305-8569 (Japan)
Description
Carbon nanoscrolls (CNS) with their open ended morphology have recently attracted interest due to the potential application in gas capture, biosensors and interconnects. However, CNS currently suffer from the same issue that have hindered widespread integration of CNTs in sensors and devices: formation is done ex situ, and the tubes have to be placed with precision and reliability—a difficult task with low yield. Here, we demonstrate controlled in situ formation of electrically contacted CNS from suspended graphene nanoribbons with slight tensile stress. Formation probability depends on the length to width aspect ratio. Van der Waals interaction between the overlapping layers fixes the nanoscroll once formed. The stability of these CNSs is investigated by helium nano ion beam assisted in situ cutting. The loose stubs remain rolled and mostly suspended unless subject to a moderate helium dose corresponding to a damage rate of 4%–20%. One CNS stub remaining perfectly straight even after touching the SiO2 substrate allows estimation of the bending moment due to van der Waals force between the CNS and the substrate. The bending moment of 5400 eV is comparable to previous theoretical studies. The cut CNSs show long-term stability when not touching the substrate. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/aab82cAdditional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 29
- Journal Issue
- 23
- Journal Page Range
- [7 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51057957
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ASPECT RATIO; DAMAGE; ELECTRIC CONTACTS; FABRICATION; GRAPHENE; HELIUM; ION BEAMS; LAYERS; LENGTH; MORPHOLOGY; NANOSTRUCTURES; SENSORS; SILICA; SILICON OXIDES; STABILITY; SUBSTRATES; VAN DER WAALS FORCES
- Descriptors DEC
- BEAMS; CARBON; CHALCOGENIDES; DIMENSIONLESS NUMBERS; DIMENSIONS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; FLUIDS; GASES; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; RARE GASES; SILICON COMPOUNDS