Published March 22, 2013 | Version v1
Journal article

Numerical analysis on effective electric field penetration depth for interdigital impedance sensor

  • 1. Department of Electrical Engineering, Kim Chaek University of Technology, Yongguang Street, Pyongyang, D.P.R. Korea (Korea, Republic of)
  • 2. School of Electrical Engineering, Dalian University of Technology, Linggong Road 2, Dalian 116024 (China)
  • 3. Hamhung Institute of Water Resource and Power, 2.8 Street, Hamhung, D.P.R. Korea (Korea, Republic of)

Description

Interdigital (finger-like) electrodes are widely used for electrical impedance and capacitance tomography of composite dielectric materials and complex insulating structures. Because of their advantages, they are now effectively introduced as capacitance sensors into a variety of industrial branches, agriculture, medical science, biological engineering, military branches, etc. In order to effectively apply the so-called interdigital impedance sensors in practice, of great importance is to optimize the sensor design parameters such as the electric field penetration depth, signal strength and so on. The general design principles of the interdigital capacitance sensor have been discussed for a long time by many researchers. However, there is no consensus on the definition of the effective electric field penetration depth of interdigital electrode. This paper discusses how to determine the effective electric field penetration depth of interdigital sensor on the basis of the refractive principle of electric field intensity and the FEM analyses of electric field distribution and capacitance for the sensor model.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/418/1/012020

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
418
Journal Issue
1
Journal Page Range
[9 p.]
ISSN
1742-6596

Conference

Title
7. international conference on applied electrostatics
Acronym
ICAES-2012
Dates
17-19 Sep 2012
Place
Dalian (China)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44114156
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CAPACITANCE; DIELECTRIC MATERIALS; DISTRIBUTION; ELECTRIC FIELDS; IMPEDANCE; NUMERICAL ANALYSIS; PENETRATION DEPTH
Descriptors DEC
ELECTRICAL PROPERTIES; MATERIALS; MATHEMATICS; PHYSICAL PROPERTIES