Effects of high energy ion irradiation on crystallization of amorphous germanium films deposited on calcium fluoride substrates
Creators
- 1. National Industrial Research Inst. of Nagoya (Japan)
Description
Amorphous (a-) Ge films were deposited on air-cleaved CaF2 (111) substrates at different deposition temperatures (Td). The films were irradiated with 0.9 MeV Ge or Si ions at low ion current intensity (Ic) 100 nA/cm2. Their structural changes were studied by Rutherford backscattering spectrometry (RBS)-channeling technique and thin film x-ray diffraction (XRD) measurement. It was found that films were epitaxially crystallized by Ge and Si ion irradiation although they included randomly oriented grains. Ge ion irradiation was more effective for the crystallization than Si ion irradiation. However, the amount of the randomly oriented grains was slightly higher when using Ge ions. On the other hand, ion irradiation to the films prepared at high Td also exhibited higher incidence of randomly oriented grains
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-299-5
- Imprint Title
- Ion-solid interactions for materials modification and processing
- Imprint Pagination
- 923 p.
- Series
- Materials Research Society symposium proceedings, Volume 396.
- Journal Page Range
- p. 191-194.
Conference
- Title
- Fall meeting of the Materials Research Society (MRS).
- Dates
- 27 Nov - 1 Dec 1995.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28049034
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- CRYSTALLIZATION; EXPERIMENTAL DATA; GERMANIUM; GERMANIUM IONS; GRAIN ORIENTATION; PHYSICAL RADIATION EFFECTS; SILICON IONS
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; DATA; ELEMENTS; INFORMATION; IONS; METALS; MICROSTRUCTURE; NUMERICAL DATA; ORIENTATION; PHASE TRANSFORMATIONS; RADIATION EFFECTS
Optional Information
- Secondary number(s)
- CONF-951155--.