Published July 1974
| Version v1
Journal article
Effect of deep migration of radiation defects on exoemission from silicon
- 1. Gor'kovskij Gosudarstvennyj Univ. (USSR)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Влияние глубокой миграции радиационных дефектов на экзоэмиссию с кремния
Publishing Information
- Journal Title
- Fiz. Tverd. Tela
- Journal Volume
- 16
- Journal Issue
- 7
- Series
- Fiz. Tverd. Tela.
- Journal Page Range
- 2151-2153
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 6163741
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- DIFFUSION; ELECTRON EMISSION; HIGH TEMPERATURE; ION IMPLANTATION; IRRADIATION; MEDIUM TEMPERATURE; MIGRATION LENGTH; POINT DEFECTS; SILICON; THICKNESS; TIME DEPENDENCE; TUNGSTEN IONS
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; ELEMENTS; EMISSION; IONS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only. For English translation see the journal Sov. Phys. - Solid State.