Published October 25, 1990
| Version v1
Journal article
Carrier lifetime increase in silicon by gettering with a MeV-implanted carbon-rich layer
Creators
- 1. Zentralinstitut fuer Kernforschung, Rossendorf (Germany, F.R.)
- 2. Institute for Semiconductor Physics, Frankfurt/Oder (German Democratic Republic)
Description
The gettering efficiency of silicon implanted with carbon ions in the energy range 0.33-10 MeV was tested by carrier life-time measurements. After an intentional contamination of the sample back side with gold as a lifetime killer, we found values for the generation lifetime of the minority carriers on the front side higher by 1-2 orders of magnitude as compared with unimplanted silicon. (author)
Additional details
Publishing Information
- Journal Title
- Electronics Letters
- Journal Volume
- 26
- Journal Issue
- 22
- Series
- Electron. Lett.
- Journal Page Range
- 1898-1899
- ISSN
- 0013-5194
- CODEN
- ELLEA
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 22020462
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARBON IONS; CARRIER LIFETIME; CRYSTAL DOPING; GETTERING; GOLD ADDITIONS; ION IMPLANTATION; MEV RANGE 01-10; SILICON
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; LIFETIME; MEV RANGE; SEMIMETALS