Ion implantation in the surface analysis of solid materials

Two aspects of quantitative ion implantation are discussed which are important to its use in standardisation of surface analysis. Firstly, the effect of ion energy, atomic number of the ions, depth distribution of the ion fluence in the host solid and atomic number of the solid on the retention of the ion fluence in the solid is shown in graph form. The graphs are calculated for 99% and 95% retention of normal incidence ions in polycrystalline single-element solids. Secondly, the chemical effects of ion implantation are emphasized for the purpose of cautioning against indiscriminate application of ion implanted standards in chemically sensitive methods of surface analysis, such as XPS. An example is used to demonstrate the importance of ion beam induced radiation damage for the formation of phase nuclei of a type which, because of its different crystal structure, can only grow incoherently in the host. (Author)