High-k polymeric gate insulators for organic field-effect transistors
- 1. Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, No. 38 Tongyan Road, Haihe Education Park, Tianjin 300350 (China)
Description
Gate insulators play a role as important as that of the semiconductor in high performance OFETs, with a high on/off current ratio, low hysteresis, and device stability. The essential requirements for gate dielectrics include high capacitance, high dielectric breakdown strength, solution-processibility, and flexibility. In this paper we review progress in recent years in developing high-k gate polymeric insulators for modern organic electronic applications. After a general introduction to OFETs, three types of high-k polymeric gate insulating materials are enumerated in achieving high-quality OFETs, including polymer gate insulators, polymer-inorganic gate composites or bilayers, and ion gel electrolytes. Especially, we emphasize the significance, implementation and development of high-k polymeric gate insulators used in OFETs for future low voltage operated and flexible electronics. Finally, a brief summary and outlook are presented. (topical review)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/ab00a4Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 30
- Journal Issue
- 20
- Journal Page Range
- [15 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51047286
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTROLYTES; FIELD EFFECT TRANSISTORS; FLEXIBILITY; GELS; HYSTERESIS; PERFORMANCE; POLYMERS; REVIEWS; SEMICONDUCTOR MATERIALS; STABILITY
- Descriptors DEC
- COLLOIDS; DISPERSIONS; DOCUMENT TYPES; ELECTRICAL PROPERTIES; MATERIALS; MECHANICAL PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; TENSILE PROPERTIES; TRANSISTORS