Published May 17, 2019 | Version v1
Journal article

High-k polymeric gate insulators for organic field-effect transistors

  • 1. Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, No. 38 Tongyan Road, Haihe Education Park, Tianjin 300350 (China)

Description

Gate insulators play a role as important as that of the semiconductor in high performance OFETs, with a high on/off current ratio, low hysteresis, and device stability. The essential requirements for gate dielectrics include high capacitance, high dielectric breakdown strength, solution-processibility, and flexibility. In this paper we review progress in recent years in developing high-k gate polymeric insulators for modern organic electronic applications. After a general introduction to OFETs, three types of high-k polymeric gate insulating materials are enumerated in achieving high-quality OFETs, including polymer gate insulators, polymer-inorganic gate composites or bilayers, and ion gel electrolytes. Especially, we emphasize the significance, implementation and development of high-k polymeric gate insulators used in OFETs for future low voltage operated and flexible electronics. Finally, a brief summary and outlook are presented. (topical review)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/ab00a4

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
30
Journal Issue
20
Journal Page Range
[15 p.]
ISSN
0957-4484