Published January 2011
| Version v1
Journal article
Quantum dot laser
Creators
- 1. A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, RU-194021, St Petersburg (Russian Federation)
Description
Discovery of self-organized epitaxial quantum dots (QDs) resulted in multiple breakthroughs in the field of physics of zero-dimensional heterostructures and allowed the advancement of optoelectronic devices, most remarkably, lasers. The most advanced and well-understood results are obtained for lasers based on Stranski–Krastanow InGaAs–GaAs three-dimensional QDs; even significant progress in the understanding of basic lasing properties is also achieved for QDs made of II–VI materials and 'native' QDs formed by nanoscale alloy phase separation in the InGaN–AlGaN material system
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/26/1/014001Additional details
Identifiers
- DOI
- 10.1088/0268-1242/26/1/014001;
- PII
- S0268-1242(11)58901-1;
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 26
- Journal Issue
- 1
- Journal Page Range
- [8 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45010636
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ALLOYS; EPITAXY; LANTHANUM SELENIDES; LASERS; QUANTUM DOTS; THREE-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; LANTHANUM COMPOUNDS; NANOSTRUCTURES; RARE EARTH COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS