Fabrication of n-GaN/MDMO-PPV hybrid structures for optoelectronic devices

We fabricated hybrid structures using combined properties of organic and inorganic materials for application in light emitting diode. The hybrid structures were demonstrated using poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic materials and n-GaN as inorganic materials. To investigate the effects of organic layer thickness, we changed polymer concentration and spin speed of MDMO-PPV solution. We obtained current rectifying behaviour with MDMO-PPV layer of approximate 60 nm thickness. The hybrid structure shows broad emissions covering orange range in both photoluminescence and electroluminescence spectra and its band structures matched well with energy band gap of GaN and MDOM-PPV. We expect the potential applications and the enhanced efficiency in optoelectronic devices with hybrid structure by making progress the results. -- Highlights: • We fabricated the hybrid structures using MDMO-PPV, PEDOT:PSS and n-GaN. • We investigated the effects of organic layer thickness in hybrid devices. • These results will provide a guide to develop the hybrid optoelectronic devices