Published 1998 | Version v1
Journal article

Electronic structure of p type Delta doped systems

  • 1. Departamento de Fisica de los Materiales, Universidad Nacional de Educacion a Distancia, Senda del Rey s/n, 28040 Madrid (Spain)

Description

We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

Additional details

Additional titles

Original title (Spanish)
Estructura electronica de sistemas dopadas con Delta de tipo p

Publishing Information

Journal Title
Revista Mexicana de Fisica
Journal Volume
44
Journal Issue
Suppl.3
Journal Page Range
p. 168-172
ISSN
0035-001X
CODEN
RMXFAT

Conference

Title
14. Latin American Symposium on Solid State Physics
Dates
11-16 Jan 1998
Place
Oaxaca, Oaxaca (Mexico)