Characterization of nanoparticle and porous ultra low-k using positron beam

Nanoparticle materials are important because they exhibit unique properties due to size effects, quantum tunneling, and quantum confinement. As particle sizes are reduced to the nanometer scale, presence of vacancy clusters is expected to affect properties of nanomaterials. A combination of positron lifetime spectroscopy, which tells size of vacancy clusters, and coincidence Doppler broadening of annihilation radiation, which tell where vacancy clusters are located was used to study defect structures on nanomaterials of Au nanoparticles embedded in MgO. Vacancy clusters were found on the surfaces of Au nanoparticles. When the packing density between multilevel interconnects in microelectronic devices increases, a low dielectric constant material is needed to minimize RC delay. Porous oxide films are some of these new low-k materials that have been actively studied by the microelectronics industry. An ideal porous material would consist of a network of closed, small pores with narrow size distribution. However, large and interconnected pores, so called 'killer pores', result in high current leakage and poor mechanical strength. Clearly, characterization and understanding of pore size and interconnectivity are important to optimize the design of porous materials. Using positron beam, we have found that pore percolation in porous methyl-silsesquioxane (MSQ) films strongly depends on the molecular mass of pore generators. (author)