Effect of annealing on the kinetic properties and band parameters of Hg1−x−yCdxEuySe semiconductor crystals

The results of studies of the kinetic properties of Hg1−x−yCdxEuySe semiconductor crystals in the ranges of temperatures T = 77–300 K and magnetic fields H = 0.5–5 kOe before and after heat treatment of the samples in Se vapors are reported. It is established that annealing of the samples in Se vapors induces a decrease in the electron concentration. From the concentration dependence of the electron effective mass at the Fermi level, the band gap, the matrix element of interband interaction, and the electron effective mass at the bottom of the conduction band are determined