Published October 1, 1996
| Version v1
Journal article
The noise reduction of silicon detectors by wafer analyses and technological procedures
Creators
- 1. Acad. of Sci. of the Czech Republic, Praha (Czech Republic). Inst. of Org. Chem. and Biochem.
Description
The technological preparation of a front side of a surface-barrier silicon detector (SBSD) was analyzed in two different ways. At a laboratory temperature, the developed procedures made it possible to decrease the FWHM-values of monolithic circular SBSDs with detection areas within a range of 20-200 mm2 and a minimum depleted layer of 900-1400 μm to less than 75% of the values obtained without application of the diagnostic results described. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 380
- Journal Issue
- 1-2
- Journal Page Range
- p. 198-200.
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 9. international workshop on room temperature semiconductor X- and gamma-ray detectors, associated electronics and applications.
- Dates
- 18-22 Sep 1995.
- Place
- Grenoble (France).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 28019272
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALPHA DETECTION; BACKGROUND NOISE; GRAIN BOUNDARIES; MEV RANGE 01-10; MONOCRYSTALS; SI SEMICONDUCTOR DETECTORS; SURFACE BARRIER DETECTORS; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- CHARGED PARTICLE DETECTION; CRYSTAL STRUCTURE; CRYSTALS; DETECTION; ENERGY RANGE; MEASURING INSTRUMENTS; MEV RANGE; MICROSTRUCTURE; NOISE; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; TEMPERATURE RANGE