Published July 2016
| Version v1
Journal article
One-sample based single-valued estimation of the interface profile from intersubband integrated absorption intensity data
- 1. College of Education, Hue University, Hue (Viet Nam)
- 2. College of Natural Science, Can Tho University, Can Tho (Viet Nam)
- 3. Duy Tan University, Da Nang (Viet Nam)
- 4. Institute of Physics, Vietnamese Academy of Science and Technology, Hanoi (Viet Nam)
Description
We prove the integrated absorption intensity due to intersubband optical transition in a quantum well (QW) to be a function of the correlation length of the interface roughness profile and independent of the roughness amplitude. We then develop a novel way to perform single-valued estimation of the interface roughness profile of QW from experiments conducted merely on one sample. The new method that we propose in this paper would be replicable and more economical than the traditional counterparts, which usually require at least two samples. (author)
Availability note (English)
Available from http://dx.doi.org/10.7566/JPSJ.85.074603Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of the Physical Society of Japan
- Journal Volume
- 85
- Journal Issue
- 7
- Journal Page Range
- p. 074603.1-074603.4
- ISSN
- 0031-9015
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 48008662
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; ABSORPTION SPECTRA; ENERGY-LEVEL TRANSITIONS; HETEROJUNCTIONS; INTERFACES; LINE WIDTHS; QUANTUM WELLS; ROUGHNESS; SCATTERING; SPATIAL DISTRIBUTION
- Descriptors DEC
- DISTRIBUTION; NANOSTRUCTURES; SEMICONDUCTOR JUNCTIONS; SORPTION; SPECTRA; SURFACE PROPERTIES
Optional Information
- Notes
- 27 refs., 3 figs.