Simulation of the dependence of X ray dose enhancement factor on gold and silicon at gold-silicon interface

The dependence of DEF on energy at gold-silicon interface for different thickness of gold and silicon is simulated by using Monte Carlo method. The calculation results indicate that the thickness of gold and silicon will effect the DEF in silicon, the DEF at gold-silicon interface will increase with the increasing of gold and silicon thickness. Furthermore, for fixed gold thickness, the DEF will decrease with the increasing distance from gold-silicon interface. (authors)