Published January 2014 | Version v1
Journal article

Radiation-hardened-by-design clocking circuits in 0.13-μm CMOS technology

  • 1. Department of Electrical Engineering, Southern Methodist University, Dallas, TX 75275 (United States)
  • 2. Department of Physics, Southern Methodist University, Dallas TX 75275 (United States)

Description

We present a single-event-hardened phase-locked loop for frequency generation applications and a digital delay-locked loop for DDR2 memory interface applications. The PLL covers a 12.5 MHz to 500 MHz frequency range with an RMS Jitter (RJ) of 4.70-pS. The DLL operates at 267 MHz and has a phase resolution of 60-pS. Designed in 0.13-μm CMOS technology, the PLL and the DLL are hardened against SEE for charge injection of 250 fC. The PLL and the DLL consume 17 mW and 22 mW of power under a 1.5 V power supply, respectively

Availability note (English)

Available from http://dx.doi.org/10.1088/1748-0221/9/01/C01029

Additional details

Publishing Information

Journal Title
Journal of Instrumentation
Journal Volume
9
Journal Issue
01
Journal Page Range
p. C01029
ISSN
1748-0221

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46055443
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
AVAILABILITY; DESIGN; MHZ RANGE; RADIATION HARDNESS; RESOLUTION
Descriptors DEC
FREQUENCY RANGE