Anomalous behaviour of thermal e.m.f. and magnetoresistance of thallium-doped lead telluride filamentary crystals
Creators
- 1. AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki
Description
Investigation results of temperature dependences of specific resistance ρ(T), thermo emf α(T) and magnetofield dependences Δρ(B)/ρ0 of pure and thallium-alloyed filamentary lead telluride crystals are presented. Filamentary monocrystals PbTe are prepared by filling quartz microcapillaries with the melt of the composition Pb1-xTlxTe (x=0.0025 at % with its subsequent crystallization. The value of specific resistance of the monocrystals studied shows that conductivity in PbTe is conditioned by impurity charge carriers which, in its turn, testifies to the fact that the charge of sign and negative value thermo emf in the range of low temperatures (T <or approx. 100 K) can not be associated with transition to intrinsic conductivity, where electron contribution will be much higher at the expense of a higher mobility
Additional details
Additional titles
- Original title (Russian)
- Аномальное поведение термоэдс и магнитосопротивления нитевидных кристаллов теллурида свинца, легированного таллием
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 20
- Journal Issue
- 11
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2120-2122
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 18068372
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; FILAMENTS; LEAD TELLURIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; THALLIUM ADDITIONS; THERMOELECTRIC PROPERTIES; ULTRALOW TEMPERATURE
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; LEAD COMPOUNDS; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- For English translation see the journal Soviet Physics - Semiconductors (USA).