Preparation and optical properties of SiO2 stablized SnO2 quantum dot films

SiO2 stabilized SnO2 quantum dot were prepared by sol-gel-hydrothermal process. Then SnO2 quantum dot thin films were obtained by spin-coating with preprocess of well dispersing SnO2 quantum dots in SiO2 sol. The as-prepared SnO2 quantum dots showed tetragonal rutile crystal structure and quantum dot radius of about 4.0 nm. The optical bad gap of the thin films was derived from UV-vis transmission spectra, with value of about 3.96 eV. The SnO2 quantum dot thin films showed multi-peak photoluminescence properties at room temperature, mainly excitation emission at 356 nm and defect emission at 388 nm. (authors)