Published November 2018 | Version v1
Journal article

Modification of the Ferromagnetic Properties of Si1–xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure

  • 1. Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center"Crystallography and Photonics", Russian Academy of Sciences (Russian Federation)
  • 2. Kapitza Institute for Physical Problems, Russian Academy of Sciences (Russian Federation)
  • 3. National Research Center "Kurchatov Institute" (Russian Federation)
  • 4. Moscow State University (Russian Federation)

Description

A series of thin films of Si1–xMnx alloys with a thickness from 50 to 100 nm grown by pulsed laser deposition on an Al2O3 substrate in vacuum and in an argon atmosphere is investigated. The significant effect of the buffer-gas pressure in the sputtering chamber on the structural and magnetic homogeneity of the obtained films is shown. The conditions for the formation of a ferromagnetic phase with a high Curie temperature (>300 K) in the samples are studied. With the use of the Langmuir probe method, the threshold of ablation of a MnSi target by second harmonic radiation (λ = 532 nm) of a Nd:YAG Q-switch laser is determined. The time-of-flight curves for the plume ions are obtained with a change in the energy density at the target and argon pressure in the sputtering chamber. A nonmonotonic dependence of the probe time-of-flight signal amplitude on the argon pressure is established for high-energy particles of the plume.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
52
Journal Issue
11
Journal Page Range
p. 1424-1427
ISSN
1063-7826
CODEN
SMICES

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Copyright
Copyright (c) 2018 Pleiades Publishing, Ltd.