Published March 16, 1989 | Version v1
Journal article Metadata-only

On the specific features of gallium arsenide doping with donor by ion implantation

Creators

  • 1. Scientific Research Instiute of Radiomaterials, Minsk (Byelorussian SSR)

Description

The specific aspects are investigated of the formation of GaAs FET regions by ion implantation. Selenium is used as a dopant for n-type layers. The layers of the n+-type are formed by using Se and Ga ions. The influence is shown of the raw material and annealing conditions on the parameters of the layers formed. (author)

Additional details

Publishing Information

Journal Title
Physica Status Solidi A
Journal Volume
112
Journal Issue
1
Series
Phys. Status Solidi A.
Journal Page Range
331-334
ISSN
0031-8965
CODEN
PSSAB

Conference

Title
International conference on ion implantation in semiconductors and other materials.
Dates
12-17 Sep 1988.
Place
Lublin (Poland).

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
20064753
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CARRIER DENSITY; CHROMIUM ADDITIONS; CRYSTAL DOPING; DEPTH; ELECTRIC CONDUCTIVITY; GALLIUM ADDITIONS; GALLIUM ARSENIDES; HALL EFFECT; ION BEAMS; ION IMPLANTATION; LAYERS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SELENIUM ADDITIONS; SPATIAL DISTRIBUTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; HEAT TREATMENTS; PHYSICAL PROPERTIES; RADIATION EFFECTS