Influence of thermally induced strains on the formation energies of 1s- and 2s-excitons in a stressed ZnSe/ZnS quantum well

In the framework of the deformation potential model, the formation energies of 1s- and 2s-excitons in a ZnSe/ZnS quantum well have been calculated taking into account both the mechanical strain appearing in the heterostructure owing to the lattice mismatch between two contacting layers and the thermally induced strain caused by their different coefficients of thermal expansion