Published October 2002
| Version v1
Journal article
Preparation of Si1-x-yGexCy semiconductor films on Si by ion implantation and solid phase epitaxy
- 1. Lanzhou Univ., Lanzhou (China). Dept. of Physics
Description
Si1-x-yGexCy ternary alloy semiconductor films were prepared on Si(100) substrates by C ion implanting SiGe films and subsequent solid phase epitaxy (SPE). Two-step annealing technique was employed in the SPE processing. The properties of the alloy films were determined using Rutherford backscattering spectroscopy (RBS), Fourier transform infrared spectroscopy (FTIR) and High-resolution x-ray diffraction (HRXRD) measurements. It is shown that C atoms are located at substitutional sites and the incorporation of C relieves the compressive strain in the SiGe layer
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 51
- Journal Issue
- 10
- Journal Page Range
- p. 2340-2343
- ISSN
- 1000-3290
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 34068321
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; BACKSCATTERING; CARBON IONS; EPITAXY; FOURIER TRANSFORM SPECTROMETERS; GERMANIUM SILICIDES; INFRARED SPECTROMETERS; ION IMPLANTATION; RUTHERFORD SCATTERING; SILICON; TERNARY ALLOY SYSTEMS; THIN FILMS; X-RAY DIFFRACTOMETERS
- Descriptors DEC
- ALLOY SYSTEMS; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; DIFFRACTOMETERS; ELASTIC SCATTERING; ELEMENTS; FILMS; GERMANIUM COMPOUNDS; HEAT TREATMENTS; IONS; MEASURING INSTRUMENTS; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SPECTROMETERS