Published March 5, 2012 | Version v1
Journal article Metadata-only

Effects of Proton Irradiation on the Magnetoelectric Properties of 2DEG AlGaN/GaN Micro-Hall Sensors

Creators

  • 1. Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
  • 2. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
  • 3. Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki-cho, Takasaki, Gunma 370-1292 (Japan)

Description

The effects of irradiating AlGaN/GaN micro-Hall sensors with 380 keV protons on were investigated by magnetoresistance measurements. The sheet resistance increased after irradiation with a proton dose of 1x1013 cm-2 due to the decrease of carrier mobility rather than the decrease of sheet carrier density. Our experiments showed that AlGaN/GaN two-dimensional electron gas (2DEG) structures are good strong candidates for Hall sensors operable in harsh radiation environments.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/352/1/012010

Additional details

Identifiers

DOI
10.1088/1742-6596/352/1/012010;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
352
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
Asia-Pacific interdisciplinary research conference 2011
Acronym
AP-IRC 2011
Dates
17-18 Nov 2011
Place
Aichi (Japan)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43104995
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM NITRIDES; CARRIER DENSITY; CARRIER MOBILITY; ELECTRON GAS; GALLIUM NITRIDES; HALL EFFECT; INTERFACES; IRRADIATION; KEV RANGE; MAGNETIC PROPERTIES; MAGNETORESISTANCE; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SENSORS
Descriptors DEC
ALUMINIUM COMPOUNDS; BEAMS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY RANGE; GALLIUM COMPOUNDS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS