Low pressure magnetron sputtering using ionized, sputtered species

The possibility of a self-sustained magnetron sputtering process, without the presence of an inert gas, is demonstrated. The advantages of this process are as follows: the possibility of thin metal film deposition at very low pressures p ≤ 4x10-4 Torr; a very high sputtering rate; an absence of inert gas particles in the deposited films; a possibility of deposition on substrates placed at a distance from the target much smaller than the mean free path; a decrease in the plasma discharge influence on substrate, the substrate can be placed at a greater than usual distance from the target. Low pressure magnetron sputtering using target ions opens new possibilities for thin film deposition. The method combines the advantages of both electron beam evaporation (purity, rate) and sputtering (good adhesion, repeatability, free choice of deposition geometry). (orig.)