Published February 1983
| Version v1
Journal article
On phosphorus localization in neutron-doped silicon
- 1. Belorusskij Politekhnicheskij Inst., Minsk
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- О локализации фосфора в нейтронно-легированном кремнии
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 17
- Journal Issue
- 2
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 366-367
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 14797256
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; ELECTRON SPIN RESONANCE; HIGH TEMPERATURE; INTERSTITIALS; MEDIUM TEMPERATURE; MONOCRYSTALS; NEUTRON REACTIONS; NEUTRONS; P-TYPE CONDUCTORS; PHOSPHORUS 31; PHYSICAL RADIATION EFFECTS; QUANTITY RATIO; SILICON; TEMPERATURE DEPENDENCE; TRANSMUTATION
- Descriptors DEC
- BARYON REACTIONS; BARYONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRON REACTIONS; HADRONS; HEAT TREATMENTS; ISOTOPES; LIGHT NUCLEI; MAGNETIC RESONANCE; MATERIALS; NUCLEAR REACTIONS; NUCLEI; NUCLEON REACTIONS; NUCLEONS; ODD-EVEN NUCLEI; PHOSPHORUS ISOTOPES; POINT DEFECTS; RADIATION EFFECTS; RESONANCE; SEMICONDUCTOR MATERIALS; SEMIMETALS; STABLE ISOTOPES
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).