Published December 1993
| Version v1
Journal article
Exposure of boundaries in epitaxial structures on the basis of A3B5
Creators
- 1. Belorusskij Gosudarstvennyj Inst. Narodnogo Khozyajstva, Minsk (Belarus)
Description
Results of chemical methods application for GaAs and InP layer boundary revealing are presented. Optimal conditions of treatment and etching depth of the materials during boundary revealing are determined. Effect of the substrate type on the conditions of layer-substrate boundary revealing is found. At equal treatment conditions on the epitaxial structure spalling with an n+ substrate is formed more distinet image of boundary line in comparison with a structure obtained at a semi-isolating substrate
Additional details
Additional titles
- Original title (Russian)
- Vyyavlenie granits v ehpitaksial'nykh strukturakh na osnove A
Publishing Information
- Journal Title
- Neorganicheskie Materialy
- Journal Volume
- 29
- Journal Issue
- 12
- Journal Page Range
- p. 1597-1600.
- ISSN
- 0002-337X
- CODEN
- NEOMB8
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26019982
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- EPITAXY; ETCHING; INDIUM PHOSPHIDES; LAYERS; PHASE STUDIES; SEMICONDUCTOR MATERIALS; SUBSTRATES
- Descriptors DEC
- CRYSTAL GROWTH METHODS; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES