Investigation of the internal electric field in cadmium zinc telluride detectors using the Pockels effect and the analysis of charge transients
Creators
- 1. Department of Physics, Fisk University, 1000 17th Ave., Nashville, Tennessee 37208 (United States)
- 2. Department of Physics and Astronomy, Washington University in St. Louis, 1 Brookings Dr., CB 1105, St. Louis, Missouri 61130 (United States)
Description
The Pockels electro-optic effect can be used to investigate the internal electric field in cadmium zinc telluride (CZT) single crystals that are used to fabricate room temperature x and gamma radiation detectors. An agreement is found between the electric field mapping obtained from Pockels effect images and the measurements of charge transients generated by alpha particles. The Pockels effect images of a CZT detector along two mutually perpendicular directions are used to optimize the detector response in a dual anode configuration, a device in which the symmetry of the internal electric field with respect to the anode strips is of critical importance. The Pockels effect is also used to map the electric field in a CZT detector with dual anodes and an attempt is made to find a correlation with the simulated electric potential in such detectors. Finally, the stress-induced birefringence effects seen in the Pockels images are presented and discussed.
Additional details
Identifiers
- DOI
- 10.1063/1.3272882;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 107
- Journal Issue
- 2
- Journal Page Range
- p. 023704-023704.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42069553
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALPHA DETECTION; BIREFRINGENCE; CADMIUM COMPOUNDS; CORRELATIONS; ELECTRIC FIELDS; ELECTRO-OPTICAL EFFECTS; GAMMA DETECTION; IMAGES; MONOCRYSTALS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; TRANSIENTS; X-RAY DETECTION; ZINC COMPOUNDS
- Descriptors DEC
- CHARGED PARTICLE DETECTION; CRYSTALS; DETECTION; MATERIALS; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; REFRACTION; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2010 American Institute of Physics