Studies on optical properties of antimony doped SnO2 films
Creators
Description
Highlights: • Antimony doped tin oxide thin films were grown by spray method on glass substrates. • The antimony doping was varied from 0 to 4 at%. • The structural properties of the films were investigated by X-ray diffraction method. • A simple analysis according to Swanepoel's method was applied to derive the real and imaginary parts of the complex index of refraction plus film thickness. • The dispersion of refractive index was investigated in terms of the single-oscillator Wemple and DiDomenico model to determine the optical parameters. - Abstract: Antimony doped tin oxide thin films were grown by spray method on microscope glass substrates. The antimony doping was varied from 0 to 4 at%. The structural properties of the films were investigated by X-ray diffraction method. The optical transmittances of thin films were measured with UV-Vis-NIR spectrometer in the 300–2000 nm wavelength range. A simple analysis according to Swanepoel's method was applied to derive the real and imaginary parts of the complex index of refraction plus film thickness. The dispersion of refractive index was investigated in terms of the single-oscillator Wemple and DiDomenico model and the important oscillating parameters such as the dispersion energy Ed, the oscillation energy Eo, the high frequency dielectric constant ε∞ were determined. The analysis of the refractive index has been carried out to calculate the lattice dielectric constant εL and the ratio of carrier concentration to the effective mass N/m*. The real and imaginary parts of the electronic dielectric constant and optical conductivity were analyzed. The optical band gap, Eg values of the films were obtained from the spectral dependence of the absorption coefficient, using the Tauc relation.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2015.03.057Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2015.03.057;
- PII
- S0169-4332(15)00634-0;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 352
- Journal Page Range
- p. 16-22
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 10. international conference on physics of advanced materials
- Acronym
- ICPAM-10
- Dates
- 22-28 Sep 2014
- Place
- Iasi (Romania)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48017429
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTIMONY; CONCENTRATION RATIO; DIELECTRIC MATERIALS; DIFFRACTION METHODS; DOPED MATERIALS; EFFECTIVE MASS; ENERGY GAP; NEAR INFRARED RADIATION; OSCILLATIONS; OSCILLATORS; PERMITTIVITY; REFRACTIVE INDEX; SUBSTRATES; THIN FILMS; TIN OXIDES; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIELECTRIC PROPERTIES; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; INFRARED RADIATION; MASS; MATERIALS; METALS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; SPECTRA; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.