Published October 15, 2015 | Version v1
Journal article

Studies on optical properties of antimony doped SnO2 films

Description

Highlights: • Antimony doped tin oxide thin films were grown by spray method on glass substrates. • The antimony doping was varied from 0 to 4 at%. • The structural properties of the films were investigated by X-ray diffraction method. • A simple analysis according to Swanepoel's method was applied to derive the real and imaginary parts of the complex index of refraction plus film thickness. • The dispersion of refractive index was investigated in terms of the single-oscillator Wemple and DiDomenico model to determine the optical parameters. - Abstract: Antimony doped tin oxide thin films were grown by spray method on microscope glass substrates. The antimony doping was varied from 0 to 4 at%. The structural properties of the films were investigated by X-ray diffraction method. The optical transmittances of thin films were measured with UV-Vis-NIR spectrometer in the 300–2000 nm wavelength range. A simple analysis according to Swanepoel's method was applied to derive the real and imaginary parts of the complex index of refraction plus film thickness. The dispersion of refractive index was investigated in terms of the single-oscillator Wemple and DiDomenico model and the important oscillating parameters such as the dispersion energy Ed, the oscillation energy Eo, the high frequency dielectric constant ε were determined. The analysis of the refractive index has been carried out to calculate the lattice dielectric constant εL and the ratio of carrier concentration to the effective mass N/m*. The real and imaginary parts of the electronic dielectric constant and optical conductivity were analyzed. The optical band gap, Eg values of the films were obtained from the spectral dependence of the absorption coefficient, using the Tauc relation.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2015.03.057

Additional details

Identifiers

DOI
10.1016/j.apsusc.2015.03.057;
PII
S0169-4332(15)00634-0;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
352
Journal Page Range
p. 16-22
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
10. international conference on physics of advanced materials
Acronym
ICPAM-10
Dates
22-28 Sep 2014
Place
Iasi (Romania)

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.