Electrical Properties of Al, Ag, Cu, Ti and SS Thin Film for Electrode of Solar Cell

The Al, Ag, Cu, Ti and SS materials were deposited on the surface of glass substrate using plasma DC sputtering technique. The deposition process was done with the following plasma parameters : deposition time, gas pressure and substrate temperature with the aim to obtain a good conductance of thin films. Variation of substrate deposition time was 1 - 15 minutes, gas pressure was 5x10-2 - 7x10-2 torr and of temperature was 100 - 300 oC. The resistance measurement has been done by four points probes and the conductivity was calculated using mathematic formulation. It was obtained that the minimum resistance in the order of R = 0.07 Ω, was found at Ag materials and this was obtained at the following plasma parameters : deposition time 15 minutes, gas pressure 6x10-2 torr and temperature 300 oC, while, the resistance of : Cu, Al, Ti and SS materials were R = 0.13 Ω, R = 450 Ω, R = 633 Ω, R = 911 Ω respectively, It could be concluded that the Ag thin film has a minimum resistance, high conductivity compared to the other materials Al, Cu, Ti and SS. Ag is therefore the suitable material for applying as electrode of solar cell. (author)